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Photodiode FD-10K infrared USSR

Photodiode  FD10K infrared USSR

Photosensitivity - 500-120nm
Photosensitivity max - 850-920 nm
Working voltage -20V
Dark current -1mkA
Photo cell size -1.9 / 1.9mm
Made in the USSR before 1989
Price excl. tax: 2.00лв.
Price inc. tax: 2.40лв.
Quantity:

Photodiode KP101 for perforated tape date recording Tesla

Photodiode  KP101 for perforated tape date recording Tesla

Gold plated pins!

Max voltage: 32V .

Max current: 1mA

P max: 50mW. 

Case -2/10mm

Made in Tesla before 1989

Price excl. tax: 1.00лв.
Price inc. tax: 1.20лв.
Quantity:

Photodiode SP101 400 - 1100 nm

Photodiode SP101 400  - 1100 nm

 Especially suitable for applications from 400 nm to 1100 nm

Short switching time (typ. 20 ns)

Hermetically sealed metal package (similar to TO-5)

Application

Photointerrupters

IR-remote controls

Industrial electronics

For control and drive circuits

Price excl. tax: 2.00лв.
Price inc. tax: 2.40лв.
Quantity:

Photodiode SP102 350-1100 nm

Photodiode SP102  350-1100 nm

 Especially suitable for applications from 350 nm to 1100 nm

- high photosensitivity

- hermetically sealed metal package (TO-18), suitable up to 125 oC)

Applications: Fast optical sensor of high modulation bandwidth

Price excl. tax: 1.00лв.
Price inc. tax: 1.20лв.
Quantity:
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