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HF/VHF TRANSISTORSProducts
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Power HF pulse transistor 2T935A /KT935A / 50MHz 60W 80V 30A USSR militaryPower HF pulse transistor 2T935A /KT935A / 50MHz 60W 80V 30A USSR military ♦ - russian standard for military application Si - npn Designed for use in switching. and pulsed applications 50MHz 60W 80V 20A /30A/ Available in metal package with pin stripe. . |
Price:
9.60лв.
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Power HF , HV transistor KT926A /2N1902/ 50MHz 50W 150V USSRPower HF , HV transistor KT926A /2N1902/ 150MHz 50W 150V USSR Analog-2N1902 Si - npn It is designed for use in pulse modulators 50MHz 50W 150V /200V / 15A /20A/ Available in metal package with pin stripe. . |
Price:
9.60лв.
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Power RF transistor 2T903A / КТ903Б / 120MHz 3A 60V 30W USSR militaryPower RF transistor KT903A / КТ903А / 120MHz 3A 60V 30W USSR ♦ - russian standard for military application Si - npn
Transistors KT903A silicon structures n-p-n.
Designed for use in power amplifiers and oscillators.
Pdrameters 30W 3A /10A- pulse / h21e - 15-70 . Fmax -120MHz . Operating temperature -60…+125 0C
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Price:
4.80лв.
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Power RF transistor 2T903B / КТ903Б / 120MHz 3A 60V 30W USSR militaryPower RF transistor KT903B / КТ903Б/ 120MHz 3A 60V 30W USSR ♦ - russian standard for military application Si - npn
Transistors 2T903В silicon structures n-p-n.
Designed for use in power amplifiers and oscillators.
Pdrameters 30W 3A /10A- pulse / h21e - 40-180 . Fmax -120MHz . Operating temperature -60…+125 0C
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Price:
4.80лв.
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Power RF transistor 2T912B / 2N5070 / 1,5-30 MHz 20A 27V 30W USSRPower RF transistor KT912A / 2N5070 / 1,5-30 MHz 20A 27V 30W USSR ♦ - russian standard for military application Analog - 2N5070 Si - npn Designed for use in linear power amplifiers at frequencies of 1.5 ... 30 MHz at a supply voltage of 27 V 30W 20A h21e - 20-100. Fmax -90MHz Operating temperature -60…+125 0C Available in metal package with pin stripe. |
Price:
14.40лв.
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Power RF transistor 2T931A / KT931A / USSR military nosPower RF transistor 2T931A / KT931A / USSR military nos Marked in rhombus ♦ russian military application Si - npn Designed for use in broadband power amplifiers, frequency multipliers and oscillators at frequencies 50 ... 200 MHz at a supply voltage 28 V. Available in metal-ceramic package with pin stripe. . Military grade. Gold pins. |
Price:
36.00лв.
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Power RF transistor 2T950А 30-80 MHz 10A 84W USSR military goldPower RF transistor 2T950А 30-80 MHz 10A 84W USSR military gold ♦ - russian standard for military application Si - npn Designed for use in power amplifiers at frequencies of 30-80 MHz at a supply voltage of 28 V Parameters 84W 10A 28V h21e - 15-100. Fmax -150MHz Operating temperature -60…+125 0C Available in metal package gold plated |
Price:
96.00лв.
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Power RF transistor 2T951А 30-80 MHz 5A 45W USSR military goldPower RF transistor 2T951А 30-80 MHz 5A 45W USSR military gold ♦ - russian standard for military application Si - npn Designed for use in power amplifiers at frequencies of 30-80 MHz at a supply voltage of 28 V Parameters 45W 5A 28V h21e - 15-100. Fmax -150MHz Operating temperature -60…+125 0C Available in metal package gold plated |
Price:
72.00лв.
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Power RF transistor KT903B / КТ903Б / 120MHz 3A 60V 30W USSRPower RF transistor KT903B / КТ903Б/ 120MHz 3A 60V 30W USSR Si - npn
Transistors KT903В silicon structures n-p-n.
Designed for use in power amplifiers and oscillators.
Pdrameters 30W 3A /10A- pulse / h21e - 40-180 . Fmax -120MHz . Operating temperature -45…+85 0C
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Price:
3.60лв.
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Power RF transistor KT907A / КТ907А/ 100-400 MHz 13W USSR goldPower RF transistor KT907A / КТ907А/ 100-400 MHz 13W USSR gold Material of transistor: Si Polarity: npn Designed for use in power amplifiers, frequency multipliers and oscillators at frequencies 100 ... 400 MHz at a supply voltage 28 V. Available in metal housing with tough pin and mounting screw. Type of device is indicated on the package. Gold pins. |
Price:
7.20лв.
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