HGTG20N60A4 IGBT Транзистор 70A 600V 290W N-Channel

HGTG20N60A4 IGBT Транзистор 70A  600V N-Channel

Package/Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.8 V

Maximum Gate Emitter Voltage: +/- 20 V

Continuous Collector Current at 25 C: 70 A

Pd - Power Dissipation: 290 W

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Brand: ON Semiconductor / Fairchild

Gate-Emitter Leakage Current: +/- 250 nA

Height: 20.82 mm

Length: 15.87 mm